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Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With $\hbox{Al}_{2}\hbox{O}_{3}$ and $\hbox{Al}_{2}\hbox{O}_{3}/\hbox{SiN}_{x}$ Gate Dielectrics
In-tak Cho, Woo-seok Cheong, Chi-sun Hwang, Jeong-min Lee, Hyuck-in Kwon, Jong-ho LeeVolume:
30
Year:
2009
Language:
english
DOI:
10.1109/LED.2009.2023543
File:
PDF, 410 KB
english, 2009