Method for Extracting Doping Concentration and Flat-Band...

IEEE Electron Device Letters 2013 / 08 Vol. 34; Iss. 8

Method for Extracting Doping Concentration and Flat-Band Voltage in Junctionless Multigate MOSFETs Using 2-D Electrostatic Effects

Rudenko, Tamara, Yu, Ran, Barraud, Sylvain, Cherkaoui, Karim, Nazarov, Alexey
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2268575
Date:
August, 2013
File:
PDF, 532 KB
english, 2013
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