[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology...

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[IEEE 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM - Capri, Italy (2009.10.12-2009.10.14)] 2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - SiGe HBT noise parameters extraction using in-situ silicon integrated tuner in MMW range 60–110GHz

Tagro, Y., Gloria, D., Boret, S., Lepillet, S., Dambrine, G.
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Year:
2009
Language:
english
DOI:
10.1109/BIPOL.2009.5314138
File:
PDF, 687 KB
english, 2009
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