Growth of High-Quality AlN, GaN and AlGaN with Atomically...

Japanese Journal of Applied Physics 1997 / 12 Vol. 36; Iss. Part 2, No

Growth of High-Quality AlN, GaN and AlGaN with Atomically Smooth Surfaces on Sapphire Substrates

Ohba, Yasuo, Yoshida, Hiroaki, Sato, Rie
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Volume:
36
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.36.L1565
Date:
December, 1997
File:
PDF, 627 KB
1997
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