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[IEEE 2009 IEEE International Reliability Physics Symposium - Montreal, QC, Canada (2009.04.26-2009.04.30)] 2009 IEEE International Reliability Physics Symposium - Dual nature of metal gate electrode effects on BTI and dielectric breakdown in TaC/HfSiON MISFETs
Fukatsu, Shigeto, Hirano, Izumi, Tatsumura, Kosuke, Masada, Akiko, Fujii, Shosuke, Mitani, Yuichiro, Goto, Masakazu, Inumiya, Seiji, Nakajima, Kazuaki, Kawanaka, Shigeru, Aoyama, TomonoriYear:
2009
Language:
english
DOI:
10.1109/IRPS.2009.5173280
File:
PDF, 340 KB
english, 2009