[IEEE 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors - Portland, OR, USA (28-30 Sept. 2004)] 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004. - Formation of advanced silicides using single wafer rapid thermal furnace in the temperature range of 200° - 1000°C
Foggiato, J., Woo Sik Yoo,, Fukada, T., Murakami, T., Kitaek Kang,Year:
2004
Language:
english
DOI:
10.1109/RTP.2004.1441945
File:
PDF, 1.25 MB
english, 2004