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High-$f_{{\rm MAX}}$ High Johnson's Figure-of-Merit 0.2- $\mu{\rm m}$ Gate AlGaN/GaN HEMTs on Silicon Substrate With ${\rm AlN}/{\rm SiN}_{{\rm x}}$ Passivation
Huang, Sen, Wei, Ke, Liu, Guoguo, Zheng, Yingkui, Wang, Xinhua, Pang, Lei, Kong, Xin, Liu, Xinyu, Tang, Zhikai, Yang, Shu, Jiang, Qimeng, Chen, Kevin J.Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2296354
Date:
March, 2014
File:
PDF, 1.02 MB
english, 2014