[IEEE 2008 Symposium on VLSI Technology - Honolulu, HI, USA (2008.06.17-2008.06.19)] 2008 Symposium on VLSI Technology - Mobility of strained and unstrained short channel FD-SOI MOSFETs: New insight by magnetoresistance
Casse, M., Rochette, F., Bhouri, N., Andrieu, F., Maude, D.K., Mouis, M., Reimbold, G., Boulanger, F.Year:
2008
Language:
english
DOI:
10.1109/VLSIT.2008.4588606
File:
PDF, 277 KB
english, 2008