Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by...

Japanese Journal of Applied Physics 2001 / 8 Vol. 40; Iss. Part 1, No

Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane

Kato, Masashi, Ichimura, Masaya, Arai, Eisuke, Masuda, Yasuichi, Chen, Yi, Nishino, Shigehiro, Tokuda, Yutaka
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Volume:
40
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.40.4943
Date:
August, 2001
File:
PDF, 198 KB
english, 2001
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