[IEEE 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - New Orleans, LA, USA (2010.01.11-2010.01.13)] 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) - Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs

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