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High-Frequency Microwave Noise Characteristics of InAlN/GaN High-Electron Mobility Transistors on Si (111) Substrate
Arulkumaran, S., Ranjan, K., Ng, G. I., Kumar, C. M. Manoj, Vicknesh, S., Dolmanan, S. B., Tripathy, S.Volume:
35
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2014.2343455
Date:
October, 2014
File:
PDF, 914 KB
english, 2014