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[IEEE 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - San Jose, CA, USA (April 17-21, 2005)] 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. - Effect of layout orientation on the performance and reliabiltiy of high voltage N-LDMOS in standard submicron logic STI CMOS process
Bin Wang,, Hoc Nguyen,, Mavoori, J., Horch, A., Yanjun Ma,, Humes, T., Paulsen, R.Year:
2005
Language:
english
DOI:
10.1109/RELPHY.2005.1493189
File:
PDF, 379 KB
english, 2005