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[Japan Soc. Appl. Phys International Conference on Simulation of Semiconductor Process and Devices. SISPAD 99 - Kyoto, Japan (6-8 Sept. 1999)] 1999 International Conference on Simulation of Semiconductor Processes and Devices. SISPAD'99 (IEEE Cat. No.99TH8387) - Comparison of finite element and finite box discretization for three-dimensional diffusion modeling using AMIGOS
Haindl, B., Kosik, R., Fleischmann, P., Selberherr, S.Year:
1999
Language:
english
DOI:
10.1109/SISPAD.1999.799278
File:
PDF, 300 KB
english, 1999