[IEEE 2012 24th International Conference on Microelectronics (ICM) - Algiers, Algeria (2012.12.16-2012.12.20)] 2012 24th International Conference on Microelectronics (ICM) - Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs
Sasso, Grazia, d'Alessandro, Vincenzo, Costagliola, Maurizio, Rinaldi, NiccoloYear:
2012
Language:
english
DOI:
10.1109/ICM.2012.6471370
File:
PDF, 207 KB
english, 2012