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[IEEE 2011 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Osaka, Japan (2011.09.8-2011.09.10)] 2011 International Conference on Simulation of Semiconductor Processes and Devices - The flexible compact SOI-MOSFET model HiSIM-SOI valid for any structural types
Miyake, M., Kusu, S., Kikuchihara, H., Tanaka, A., Shintaku, Y., Ueno, M., Nakashima, J., Feldmann, U., Mattausch, H. J., Miura-Mattausch, M., Yoshida, T.Year:
2011
Language:
english
DOI:
10.1109/SISPAD.2011.6034968
File:
PDF, 489 KB
english, 2011