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Interpretation of ion-channeling spectra in ion-implanted Si with models of structurally relaxed point defects and clusters
Lulli, Giorgio, Albertazzi, Eros, Bianconi, Marco, Satta, Alessandra, Balboni, Simone, Colombo, LucianoVolume:
69
Language:
english
Journal:
Physical Review B
DOI:
10.1103/PhysRevB.69.165216
Date:
April, 2004
File:
PDF, 156 KB
english, 2004