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[IEEE International Conference on Indium Phosphide and Related Materials - Denver, CO, USA (1990.04.23-1990.04.25)] International Conference on Indium Phosphide and Related Materials - Highest current gain cutoff frequency with 0.08 mu m gate HEMT on InP
Riaziat, M., Nishimoto, C., Silverman, S., Pao, Y.C., Weng, S.L., Glenn, M., Bandy, S., Majidi-Ahy, R., Zdasiuk, G.Year:
1990
DOI:
10.1109/ICIPRM.1990.202985
File:
PDF, 424 KB
1990