The Effect of Gate Metal Interdiffusion on Reliability...

IEEE Electron Device Letters 2004 Vol. 25; Iss. 6

The Effect of Gate Metal Interdiffusion on Reliability Performance in GaAs PHEMTs

Y. Chou, D. Leung, R. Grundbacher, R. Lai, P. Liu, Q. Kan, M. Biedenbender, D. Eng, A. Oki
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Volume:
25
Year:
2004
Language:
english
DOI:
10.1109/LED.2004.828989
File:
PDF, 144 KB
english, 2004
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