Experimental Analysis of Within-Die Process Variation in 65 and 180 nm Complementary Metal–Oxide–Semiconductor Technology Including Its Distance Dependences
Ansari, Tania, Imafuku, Wataru, Yasuda, Masahiro, Mattausch, Hans Jürgen, Koide, TetsushiVolume:
51
Language:
english
Journal:
Japanese Journal of Applied Physics
DOI:
10.1143/JJAP.51.04DE03
Date:
April, 2012
File:
PDF, 1013 KB
english, 2012