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[IEEE 2012 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu (2012.04.23-2012.04.25)] Proceedings of Technical Program of 2012 VLSI Technology, System and Application - PBTI characteristics of N-channel tunneling field effect transistor with HfO2 gate dielectric: New insights and physical model
Genquan Han,, Yue Yang,, Pengfei Guo,, Chunlei Zhan,, Kain Lu Low,, Kian Hui Goh,, Bin Liu,, Eng-Huat Toh,, Yee-Chia Yeo,Year:
2012
Language:
english
DOI:
10.1109/VLSI-TSA.2012.6210114
File:
PDF, 349 KB
english, 2012