[IEEE 2011 IEEE International Integrated Reliability Workshop (IIRW) - South Lake Tahoe, CA, USA (2011.10.16-2011.10.20)] 2011 IEEE International Integrated Reliability Workshop Final Report - Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress
Tkachev, Yuri, Kotov, AlexanderYear:
2011
Language:
english
DOI:
10.1109/IIRW.2011.6142599
File:
PDF, 513 KB
english, 2011