High-performance SiGe epitaxial base bipolar transistors...

IEEE Electron Device Letters 1993 Vol. 14; Iss. 9

High-performance SiGe epitaxial base bipolar transistors produced by a reduced-pressure CVD reactor

M. Hong, E. De Fresart, J. Steele, A. Zlotnicka, C. Stein, G. Tam, M. Racanelli, L. Knoch, Y. See, K. Evans
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Volume:
14
Year:
1993
Language:
english
DOI:
10.1109/55.244710
File:
PDF, 257 KB
english, 1993
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