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[IEEE 2014 IEEE International Reliability Physics Symposium (IRPS) - Waikoloa, HI, USA (2014.6.1-2014.6.5)] 2014 IEEE International Reliability Physics Symposium - Origin and implications of hot carrier degradation of Gate-all-around nanowire III–V MOSFETs
Shin, SangHoon, Wahab, Muhammad A., Masuduzzaman, Muhammad, Si, Mengwei, Gu, Jiangjiang, Ye, P. D., Alam, Muhammad A.Year:
2014
Language:
english
DOI:
10.1109/IRPS.2014.6860641
File:
PDF, 362 KB
english, 2014