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[IEEE 2006 Ph.D. Research in Microelectronics and Electronics - Otranto, Italy (12-15 June 2006)] 2006 Ph.D. Research in Microelectronics and Electronics - High-quality MOCVD AlGaN/GaN structure for HEMT applications
Poti, B., Passaseo, A., De Vittorio, M., Peroni, M., Cetronio, A., Romanini, P.Year:
2006
Language:
english
DOI:
10.1109/RME.2006.1689985
File:
PDF, 239 KB
english, 2006