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[IEEE 2010 IEEE International Memory Workshop - Seoul, Korea (South) (2010.05.16-2010.05.19)] 2010 IEEE International Memory Workshop - A 1.0V power supply, 9.5GByte/sec write speed, Single-Cell Self-Boost program scheme for Ferroelectric NAND Flash SSD
Miyaji, Kousuke, Noda, Shinji, Hatanaka, Teruyoshi, Takahashi, Mitsue, Sakai, Shigeki, Takeuchi, KenYear:
2010
Language:
english
DOI:
10.1109/IMW.2010.5488322
File:
PDF, 394 KB
english, 2010