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[IEEE International Technical Digest on Electron Devices Meeting - Washington, DC, USA (3-6 Dec. 1989)] International Technical Digest on Electron Devices Meeting - Velocity saturation effect in heterostructure field effect transistors
Han, C.J., Ruden, P.P., Nohava, T., Narum, D., Grider, D., Newstrom, K., Joslyn, P., Shur, M.Year:
1989
Language:
english
DOI:
10.1109/IEDM.1989.74242
File:
PDF, 201 KB
english, 1989