![](/img/cover-not-exists.png)
[IEEE 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Naples, Italy (04-08 June 2006)] 2006 IEEE International Symposium on Power Semiconductor Devices & IC's - Dose Designing and Fabrication of 4H-SiC Double RESURF MOSFETs
Noborio, M., Suda, J., Kimoto, T.Year:
2006
Language:
english
DOI:
10.1109/ISPSD.2006.1666124
File:
PDF, 4.47 MB
english, 2006