Gate-Field Engineering and Source/Drain Diffusion...

IEEE Transactions on Nanotechnology 2011 Vol. 10; Iss. 4

Gate-Field Engineering and Source/Drain Diffusion Engineering for High-Performance Si Wire GAA MOSFET and Low-Power Strategy in Sub-30-nm-Channel Regime

Y. Omura, S. Nakano, O. Hayashi
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Volume:
10
Year:
2011
Language:
english
DOI:
10.1109/TNANO.2010.2071396
File:
PDF, 1.53 MB
english, 2011
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