[IEEE 2012 Conference on Optoelectronic and Microelectronic Materials & Devices (COMMAD) - Melbourne, Australia (2012.12.12-2012.12.14)] COMMAD 2012 - The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Carrad, D., Burke, A.M., Waddington, D., Lyttleton, R., Tan, H.H., Reece, P.J., Klochan, O., Hamilton, A.R., Rai, A., Reuter, D., Wieck, A.D., Micolich, A.P.Year:
2012
Language:
english
DOI:
10.1109/COMMAD.2012.6472334
File:
PDF, 485 KB
english, 2012