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[IEEE ESSDERC 2008 - 38th European Solid-State Device Research Conference - Edinburgh, UK (2008.09.15-2008.09.19)] ESSDERC 2008 - 38th European Solid-State Device Research Conference - N-MOSFETs with inversion-layer source/drain extensions formed by cesium segregation at SiO2/Si interfaces
Kimoto, Kenji, Tada, Tetsuya, Kanayama, ToshihikoYear:
2008
Language:
english
DOI:
10.1109/ESSDERC.2008.4681767
File:
PDF, 574 KB
english, 2008