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[IEEE 2009 Spanish Conference on Electron Devices (CDE) - Santiago de Compostela, Spain (2009.02.11-2009.02.13)] 2009 Spanish Conference on Electron Devices - Analysis of the C-V characteristic in SiO2/GaN MOS capacitors
Cortes, I, Al-Alam, E, Besland, MP, Regreny, P, Morancho, F, Cazarre, A, Cordier, Y, Goullet, A, Isoird, KYear:
2009
Language:
english
DOI:
10.1109/SCED.2009.4800479
File:
PDF, 3.60 MB
english, 2009