[IEEE 2009 IEEE International Electron Devices Meeting...

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[IEEE 2009 IEEE International Electron Devices Meeting (IEDM) - Baltimore, MD, USA (2009.12.7-2009.12.9)] 2009 IEEE International Electron Devices Meeting (IEDM) - Negatively charged deep level defects generated by Yttrium and Lanthanum incorporation into HfO2 for Vth adjustment, and the impact on TDDB, PBTI and 1/f noise

Sato, Motoyuki, Kamiyama, Satoshi, Sugita, Yoshihiro, Matsuki, Takeo, Morooka, Tetsu, Suzuki, Takayuki, Shiraishi, Kenji, Yamabe, Kikuo, Ohmori, Kenji, Yamada, Keisaku, Yugami, Jiro, Ikeda, Kazuto, Oh
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Year:
2009
Language:
english
DOI:
10.1109/IEDM.2009.5424407
File:
PDF, 280 KB
english, 2009
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