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[IEEE IEEE International Electron Devices Meeting - San Francisco, CA, USA (8-11 Dec. 2002)] Digest. International Electron Devices Meeting, - Silicon-rich-oxides as an alternative charge-trapping medium in Fowler-Nordheim and hot carrier type non-volatile-memory cells
Rosmeulen, M., Sleeckx, E., De Meyer, K.Year:
2002
Language:
english
DOI:
10.1109/IEDM.2002.1175810
File:
PDF, 222 KB
english, 2002