Post-CMOS FinFET Integration of Bismuth Telluride and...

IEEE Electron Device Letters 2013 / 10 Vol. 34; Iss. 10

Post-CMOS FinFET Integration of Bismuth Telluride and Antimony Telluride Thin-Film-Based Thermoelectric Devices on SoI Substrate

Aktakka, Ethem Erkan, Ghafouri, Niloufar, Smith, Casey E., Peterson, Rebecca L., Hussain, Muhammad Mustafa, Najafi, Khalil
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Volume:
34
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2013.2277693
Date:
October, 2013
File:
PDF, 977 KB
english, 2013
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