A new T-Shaped Source/Drain Extension (T-SSDE) Gate...

Solid-State Electronics 2014 / 11 Vol. 101

A new T-Shaped Source/Drain Extension (T-SSDE) Gate Underlap GAA MOSFET with enhanced subthreshold analog/RF performance for low power applications

Kumar, Manoj, Haldar, Subhasis, Gupta, Mridula, Gupta, R.S.
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Volume:
101
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.06.016
Date:
November, 2014
File:
PDF, 753 KB
english, 2014
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