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[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Effect of field plate length on DC characteristics of high breakdown voltage GaN HEMTs for power switching application
Zhang, Minglan, Wang, Xiaoliang, Peng, Mingzeng, Liu, Xinyu, Wang, RuYear:
2010
Language:
english
DOI:
10.1109/icsict.2010.5667651
File:
PDF, 446 KB
english, 2010