[Inst. Electr. Eng. Japan International Symposium on Power Semiconductor Devices and IC's - Kyoto, Japan (3-6 June 1998)] Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs. ISPSD'98 (IEEE Cat. No.98CH36212) - Analytical model for high current density trench gate MOSFET
Dharmawardana, K.G.P., Amaratunga, G.A.J.Year:
1998
Language:
english
DOI:
10.1109/ispsd.1998.702712
File:
PDF, 391 KB
english, 1998