[IEEE 2008 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA) - Hsinchu, Taiwan (2008.04.21-2008.04.23)] 2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) - Unipolar Switching Characteristics for Self-Aligned WOx Resistance RAM (R-RAM)
Chien, Wei-Chih, Lai, Erh-Kun, Chang, Kuo-Pin, Yeh, Chien-Hung, Hsueh, Ming-Hsiang, Yao, Yeong-Der, Luoh, Tuung, Hsieh, Sheng-Hui, Yang, T. H., Chen, K. C., Chen, Yi-Chou, Hsieh, Kuang-Yeu, Liu, Rich,Year:
2008
Language:
english
DOI:
10.1109/vtsa.2008.4530838
File:
PDF, 726 KB
english, 2008