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[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - Molecular Dynamic simulation study of stress memorization in Si dislocations
Shen, Tzer-Min, Tung, Yen-Tien, Cheng, Ya-Yun, Chiou, Da-Chin, Chen, Chia-Yi, Wu, Ching-Chang, Sheu, Y. M., Tsai, Han-Ting, Huang, C. M., Hsieh, G., Tsai, Gino, Fung, Samuel, Wu, Jeff, Diaz, Carlos H.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479134
File:
PDF, 1.94 MB
english, 2012