[IEEE 2012 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2012.12.10-2012.12.13)] 2012 International Electron Devices Meeting - High mobility high-κ-all-around asymmetrically-strained Germanium nanowire trigate p-MOSFETs
Chern, Winston, Hashemi, Pouya, Teherani, James T., Yu, Tao, Dong, Yuanwei, Xia, Guangrui, Antoniadis, Dimitri A., Hoyt, Judy L.Year:
2012
Language:
english
DOI:
10.1109/iedm.2012.6479055
File:
PDF, 869 KB
english, 2012