Minority-carrier lifetime and defect content of n-type...

Journal of Crystal Growth 2014 / 12 Vol. 407

Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Kivambe, Maulid, Powell, Douglas M., Castellanos, Sergio, Ann Jensen, Mallory, Morishige, Ashley E., Nakajima, Kazuo, Morishita, Kohei, Murai, Ryota, Buonassisi, Tonio
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Volume:
407
Language:
english
Journal:
Journal of Crystal Growth
DOI:
10.1016/j.jcrysgro.2014.08.021
Date:
December, 2014
File:
PDF, 4.44 MB
english, 2014
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