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Radiative recombination mechanism of carriers in InGaN/AlInGaN multiple quantum wells with varying aluminum content
Liu, Tong, Jiao, Shujie, Wang, Dongbo, Gao, Shiyong, Yang, Tianpeng, Liang, Hongwei, Zhao, LianchengVolume:
621
Language:
english
Journal:
Journal of Alloys and Compounds
DOI:
10.1016/j.jallcom.2014.09.170
Date:
February, 2015
File:
PDF, 639 KB
english, 2015