Formation mechanism of V defects in the InGaN/GaN multiple...

Applied Physics Letters 2001 Vol. 79; Iss. 2

Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density

Cho, H. K., Lee, J. Y., Yang, G. M., Kim, C. S.
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Volume:
79
Year:
2001
Language:
english
DOI:
10.1063/1.1384906
File:
PDF, 608 KB
english, 2001
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