Comparison of Epitaxial Graphene on Si-face and C-face 4H...

Nano Letters 2009 / 07 Vol. 9; Iss. 7

Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

Jernigan, Glenn G., VanMil, Brenda L., Tedesco, Joseph L., Tischler, Joseph G., Glaser, Evan R., Davidson, Anthony, Campbell, Paul M., Gaskill, D. Kurt
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Volume:
9
Language:
english
Journal:
Nano Letters
DOI:
10.1021/nl900803z
Date:
July, 2009
File:
PDF, 571 KB
english, 2009
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