A theoretical study of the performance of sub-micron MOSFET...

International Journal of Electronics 2005 / 05 Vol. 92; Iss. 5

A theoretical study of the performance of sub-micron MOSFET devices in the presence of edge potential

Kiran, V. P., Kumar, R. G., Singh *, A. K., Gurunarayanan, S.
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Volume:
92
Language:
english
Journal:
International Journal of Electronics
DOI:
10.1080/00207210500114083
Date:
May, 2005
File:
PDF, 935 KB
english, 2005
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