Semi-insulating C-doped GaN and high-mobility AlGaN/GaN heterostructures grown by ammonia molecular beam epitaxy
Webb, J. B., Tang, H., Rolfe, S., Bardwell, J. A.Volume:
75
Year:
1999
Language:
english
DOI:
10.1063/1.124252
File:
PDF, 268 KB
english, 1999