[IEEE 2014 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Montpellier Cedex, France (2014.5.11-2014.5.15)] 26th International Conference on Indium Phosphide and Related Materials (IPRM) - Highly sensitive planar-doped GaAsSb-based backward diodes at 170 GHz
Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Shiba, Shoichi, Hara, NaokiYear:
2014
Language:
english
DOI:
10.1109/iciprm.2014.6880565
File:
PDF, 259 KB
english, 2014