Degradation of 4H-SiC IGBT threshold characteristics due to...

Solid-State Electronics 2014 / 11 Vol. 101

Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

Pesic, Iliya, Navarro, Dondee, Miyake, Masataka, Miura-Mattausch, Mitiko
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Volume:
101
Language:
english
Journal:
Solid-State Electronics
DOI:
10.1016/j.sse.2014.06.023
Date:
November, 2014
File:
PDF, 730 KB
english, 2014
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