High-Temperature Nucleation of Cubic Silicon Carbide on...

Crystal Growth & Design 2006 / 12 Vol. 6; Iss. 12

High-Temperature Nucleation of Cubic Silicon Carbide on (0001) Hexagonal-SiC Nominal Surfaces

Latu-Romain, Laurence, Chaussende, Didier, Pons, Michel
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Volume:
6
Language:
english
Journal:
Crystal Growth & Design
DOI:
10.1021/cg060420l
Date:
December, 2006
File:
PDF, 852 KB
english, 2006
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