Fully Porous GaN p–n Junction Diodes Fabricated by Chemical...

ACS Applied Materials & Interfaces 2014 / 10 Vol. 6; Iss. 20

Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition

Bilousov, Oleksandr V., Carvajal, Joan J., Geaney, Hugh, Zubialevich, Vitaly Z., Parbrook, Peter J., Martínez, Oscar, Jiménez, Juan, Díaz, Francesc, Aguiló, Magdalena, O’Dwyer, Colm
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Volume:
6
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am504786b
Date:
October, 2014
File:
PDF, 3.74 MB
english, 2014
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