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Fully Porous GaN p–n Junction Diodes Fabricated by Chemical Vapor Deposition
Bilousov, Oleksandr V., Carvajal, Joan J., Geaney, Hugh, Zubialevich, Vitaly Z., Parbrook, Peter J., Martínez, Oscar, Jiménez, Juan, Díaz, Francesc, Aguiló, Magdalena, O’Dwyer, ColmVolume:
6
Language:
english
Journal:
ACS Applied Materials & Interfaces
DOI:
10.1021/am504786b
Date:
October, 2014
File:
PDF, 3.74 MB
english, 2014